Product Summary

The is 2SD1851-TB-E a PNP epitaxial silicon transistor.

Parametrics

2SD1851-TB-E absolute maximum ratings: (1)Collector-to-Base Voltage, VCBO: (–)80V; (2)Collector-to-Emitter Voltage, VCEO: (–)50V; (3)Emitter-to-Base Voltage, VEBO: (–)10V; (4)Collector Current, IC: (–)200mA; (5)Collector Current (Pulse), ICP: (–)400mA; (6)Collector Dissipation, PC: 200mW; (7)Junction Temperature, Tj: 150℃; (8)Storage Temperature, Tstg: –55 to +150℃.

Features

2SD1851-TB-E features: (1)AF amplifier, solenoid drivers, LED drivers; (2)Darlington connection; (3)High DC current gain; (4)Very small-sized package permitting sets to be made smaller and slimer.

Diagrams

2SD1851-TB-E package dimension

2SD1000
2SD1000

Other


Data Sheet

Negotiable 
2SD1001
2SD1001

Other


Data Sheet

Negotiable 
2SD1005
2SD1005

Other


Data Sheet

Negotiable 
2SD1005-BV
2SD1005-BV

Other


Data Sheet

Negotiable 
2SD1006
2SD1006

Other


Data Sheet

Negotiable 
2SD1007
2SD1007

Other


Data Sheet

Negotiable