Product Summary

The BUV21G is an NPN Silicon Power Transistor. This device is designed for high speed, high current, high power applications.

Parametrics

BUV21G absolute maximum ratings: (1)Collector-Emitter Voltage VCEO(SUS): 200 Vdc; (2)Collector-Base Voltage VCBO: 250 Vdc; (3)Emitter-Base Voltage VEBO: 7 Vdc; (4)Collector-Emitter Voltage (VBE = -1.5 V) VCEX: 250 Vdc; (5)Collector-Emitter Voltage (RBE = 100Ω) VCER: 240 Vdc; (6)Base-Current Continuous IB: 8 Adc; (7)Total Device Dissipation @ TC = 25℃ PD: 250 W; (8)Operating and Storage Junction Temperature Range TJ, Tstg: -65 to 200℃.

Features

BUV21G features: (1)High DC Current Gain: hFE min = 20 at IC = 12 A; (2)Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A; (3)Very Fast Switching Times: TF max = 0.4 s at IC = 25 A.

Diagrams

BUV21G block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BUV21G
BUV21G

ON Semiconductor

Transistors Bipolar (BJT) 40A 200V 250W NPN

Data Sheet

0-1: $6.29
1-25: $5.65
25-100: $4.97
100-500: $4.19
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BUV20
BUV20

STMicroelectronics

Transistors Bipolar (BJT) NPN High Current

Data Sheet

0-68: $6.01
68-100: $5.39
100-250: $5.03
BUV21G
BUV21G

ON Semiconductor

Transistors Bipolar (BJT) 40A 200V 250W NPN

Data Sheet

0-1: $6.29
1-25: $5.65
25-100: $4.97
100-500: $4.19
BUV22
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ON Semiconductor

Transistors Bipolar (BJT) 40A 250V 250W NPN

Data Sheet

Negotiable 
BUV22G
BUV22G

ON Semiconductor

Transistors Bipolar (BJT) 40A 250V 250W NPN

Data Sheet

0-1: $6.29
1-25: $5.65
25-100: $4.97
100-500: $4.19
BUV26F
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Other


Data Sheet

Negotiable 
BUV298V
BUV298V

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Transistors Bipolar (BJT) NPN Power Module

Data Sheet

0-1: $15.21
1-10: $12.40
10-100: $11.80
100-250: $11.43