(Hong Kong)
Product Summary
The FM25CL64-G is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. The FM25CL64-G provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.
Parametrics
FM25CL64-G absolute maximum ratings: (1)VDD Power Supply Voltage with respect to VSS: -1.0V to +5.0V; (2)VIN Voltage on any pin with respect to VSS: -1.0V to +5.0V; (3)and VIN < VDD+1.0V; (4)TSTG Storage Temperature: -55℃ to + 125℃; (5)TLEAD Lead Temperature (Soldering, 10 seconds): 300℃; (6)VESD Electrostatic Discharge Voltage. Human Body Model (JEDEC Std JESD22-A114-B): 4kV; Machine Model (JEDEC Std JESD22-A115-A): 300V; (7)Package Moisture Sensitivity Level: MSL-1.
Features
FM25CL64-G features: (1)64K bit Ferroelectric Nonvolatile RAM; (2)Organized as 8,192 x 8 bits; (3)Unlimited Read/Write Cycles; (4)45 Year Data Retention; (5)NoDelayWrites; (6)Advanced High-Reliability Ferroelectric Process; (7)Very Fast Serial Peripheral Interface - SPI; (8)Up to 20 MHz Frequency; (9)Direct Hardware Replacement for EEPROM; (10)SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FM25CL64-G |
Ramtron |
F-RAM 64K (8Kx8) 2.7V |
Data Sheet |
Negotiable |
|
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|
FM25CL64-GA |
Ramtron |
F-RAM 64K (8Kx8) 2.7V 877-FM24C512-G |
Data Sheet |
Negotiable |
|
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|
FM25CL64-GTR |
Ramtron |
F-RAM 64K (8Kx8) 2.7V |
Data Sheet |
Negotiable |
|
||||
|
FM25CL64-GATR |
Ramtron |
F-RAM 64K (8Kx8) 2.7V Grade 1 |
Data Sheet |
Negotiable |
|
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