(Hong Kong)
Product Summary
The FPD6836P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 360 µm Schottky barrier Gate, defined by high-resolution stepper-based photolithography . The FPD6836P70 is also available in die form . Typical applications include gain blocks and medium power stages for applications to 22 GHz.
Parametrics
FPD6836P70 absolute maximum ratings: (1)Drain-Source Voltage VDS: 8 V; (2)Gate-Source Voltage VGS: -3 V; (3)Gate Current IG Forward or reverse current: 15 mA; (4)RF Input Power: 170 mW; (5)Channel Operating Temperature TCH: 175℃; (6)Storage Temperature TSTG Non-Operating Storage: -40 150℃; (7)Total Power Dissipation PTOT: 550 mW; (8)Gain Compression Comp: 5 dB.
Features
FPD6836P70 features: (1)22 dBm Output Power (P1dB); (2)19 dB Power Gain (G1dB) at 1.85 GHz; (3)0.5 dB Noise Figure at 1.85 GHz; (4)32 dBm Output IP3; (5)50% Power-Added Efficiency at 1.85 GHz; (6)Useable Gain to 20 GHz; (7)Evaluation Boards Available.
Diagrams
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 FPD6836P70 |
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Negotiable |
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FPD63310 |
Other |
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Negotiable |
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FPD6836 |
Other |
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Negotiable |
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FPD6836P70 |
Other |
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Data Sheet |
Negotiable |
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FPD6836SOT343 |
Other |
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Data Sheet |
Negotiable |
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