Product Summary

The FQA47P06 is a P-Channel enhancement mode power field effect transistor. It is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. The FQA47P06 is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Parametrics

FQA47P06 absolute maximum ratings: (1)VDSS Drain-Source Voltage -60 V; (2)ID Drain Current - Continuous (TC = 25℃) -55 A; - Continuous (TC = 100℃) -38.9 A; (3)IDM Drain Current - Pulsed: -220 A; (4)VGSS Gate-Source Voltage ± 25 V; (5)EAS Single Pulsed Avalanche Energy: 820 mJ; (6)IAR Avalanche Current: -55 A; (7)EAR Repetitive Avalanche Energy: 21.4 mJ; (8)dv/dt Peak Diode Recovery dv/dt: -7.0 V/ns; (9)PD Power Dissipation: 214 W; (10)TJ, TSTG Operating and Storage Temperature Range: -55 to +175℃.

Features

FQA47P06 features: (1)-55A, -60V, RDS(on) = 0.026Ω @VGS = -10 V; (2)Low gate charge ( typical 84 nC); (3)Low Crss ( typical 320 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability; (7)175℃ maximum junction temperature rating.

Diagrams

FQA47P06 block diagram

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