Product Summary
The FQP12P10 is a P-Channel enhancement mode power field effect transistor. It is produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQP12P10 is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
Parametrics
FQP12P10 absolute maximum ratings(1)VDSS Drain-Source Voltage: -100 V; (2)ID Drain Current - Continuous (TC = 25℃): -11.5 A; (3)IDM Drain Current - Pulsed : -46 A; (4)VGSS Gate-Source Voltage: ± 30 V; (5)EAS Single Pulsed Avalanche Energy: 370 mJ; (6)IAR Avalanche Current: ; (7)EAR Repetitive Avalanche Energy: 7.5 mJ; (8)dv/dt Peak Diode Recovery dv/dt: -6.0 V/ns; (9)PD Power Dissipation (TC = 25℃): 75 W; (10)TJ, TSTG Operating and Storage Temperature Range: -55 to +175℃.
Features
FQP12P10 features: (1)-11.5A, -100V, RDS(on) = 0.29Ω @VGS = -10 V; (2)Low gate charge ( typical 21 nC); (3)Low Crss ( typical 65 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability; (7)175℃ maximum junction temperature rating.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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FQP12P10 |
Fairchild Semiconductor |
MOSFET 100V P-Channel QFET |
Data Sheet |
Negotiable |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
FQP10N20TSTU |
Fairchild Semiconductor |
MOSFET Short Leads |
Data Sheet |
Negotiable |
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FQP11N40 |
Fairchild Semiconductor |
MOSFET 400V N-Channel QFET |
Data Sheet |
Negotiable |
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FQP16N25 |
Fairchild Semiconductor |
MOSFET 250V N-Channel QFET |
Data Sheet |
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FQP16N15 |
Fairchild Semiconductor |
MOSFET 150V N-Channel QFET |
Data Sheet |
Negotiable |
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FQP12P10 |
Fairchild Semiconductor |
MOSFET 100V P-Channel QFET |
Data Sheet |
Negotiable |
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FQP17P10 |
Fairchild Semiconductor |
MOSFET 100V P-Channel QFET |
Data Sheet |
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