(Hong Kong)
Product Summary
The FW163-TL-E is a P-Channel Silicon MOSFET. It is suitable for General-Purpose Switching Device Applications.
Parametrics
FW163-TL-E absolute maximum ratings: (1)Drain-to-Source Voltage VDSS: -30 V; (2)Gate-to-Source Voltage VGSS: ±20 V; (3)Drain Current (DC) ID: - 7 A; (4)Drain Current (PW≤10s) ID Duty cycle≤1%: -9 A; (5)Drain Current (PW≤100ms) ID Duty cycle≤1%: -14 A; (6)Drain Current (PW≤10μs) IDP Duty cycle≤1%: -36 A; (7)Allowable Power Dissipation PD: 1.7 W; (8)Total Dissipation PT: 2.0 W; (9)Channel Temperature Tch: 150℃; (10)Storage Temperature Tstg: -55 to +150℃.
Features
FW163-TL-E features: (1)Low ON-resistance; (2)4V drive.
Diagrams
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FW163 |
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