(Hong Kong)
Product Summary
The HM62V8512CLTT-5 is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is available for high density mounting. The HM62V8512CLTT-5 is suitable for battery backup system.
Parametrics
HM62V8512CLTT-5 absolute maximum ratings: (1)Power supply voltage VCC: –0.5 to +4.6 V; (2)Voltage on any pin relative to VSS: VT –0.5 to VCC + 0.5V; (3)Power dissipation PT: 1.0 W; (4)Operating temperature Topr: –20 to +70℃; (5)Storage temperature Tstg: –55 to +125℃; (6)Storage temperature under bias Tbias :–20 to +85℃.
Features
HM62V8512CLTT-5 features: (1)Single 3.0 V supply: 2.7 V to 3.6 V; (2)Access time: 55/70 ns (max); (3)Power dissipation; (4)Completely static memory. No clock or timing strobe required; (5)Equal access and cycle times; (6)Common data input and output: Three state output; (7)Directly LV-TTL compatible: All inputs; (8)Battery backup operation.
Diagrams
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