Product Summary
The IRF7321D2TRPBF is a Co-packaged HEXFET and Schottky diode. It can offer the designer an innovative board space saving solution for switching regulator and power management applications. The IRF7321D2TRPBF utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.
Parametrics
IRF7321D2TRPBF absolute maximum ratings: (1)ID @ TA = 25℃ Continuous Drain Current, VGS @ -10V: -4.7 A; (2)ID @ TA = 70℃: -3.8A; (3)IDM Pulsed Drain Current: -38A; (4)PD @TA = 25℃ Power Dissipation: 2.0 W; (5)PD @TA = 70℃: 1.3W; (6)Linear Derating Factor: 16 mW/℃; (7)VGS Gate-to-Source Voltage: ± 20 V; (8)dv/dt Peak Diode Recovery dv/dt: -5.0 V/ns; (9)T T Junction and Storage Temperature Range: -55 to +150℃.
Features
IRF7321D2TRPBF features: (1)Co-packaged HEXFET Power MOSFET and Schottky Diode; (2)Ideal For Buck Regulator Applications; (3)P-Channel HEXFET; (4)Low VF Schottky Rectifier; (5)Generation 5 Technology; (6)SO-8 Footprint.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRF7321D2TRPBF |
International Rectifier |
MOSFET MOSFT PCh w/Schttky -4.9A 62mOhm 23nC |
Data Sheet |
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