Product Summary
The IRF7754TRPBF is a HEXFET Power MOSFET from International Rectifier. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter-national Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for battery and load management.
Parametrics
IRF7754TRPBF absolute maximum ratings: (1)VDS Drain-Source Voltage: -12 V; (2)ID @ TA = 25℃ Continuous Drain Current, VGS @ -4.5V: -5.5; (3)ID @ TA = 70℃ Continuous Drain Current, VGS @ -4.5V: -4.4 A; (4)IDM Pulsed Drain Current: -22A; (5)PD @TA = 25℃ Maximum Power Dissipation: 1W; (6)PD @TA = 70℃ Maximum Power Dissipation: 0.64 W; (7)Linear Derating Factor: 0.01 W/℃; (8)VGS, Gate-to-Source Voltage: ±8 V; (9)TJ , TSTG Junction and Storage Temperature Range: -55 to +150℃.
Features
IRF7754TRPBF features: (1)Ultra Low On-Resistance; (2)P-Channel MOSFET; (3)Very Small SOIC Package; (4)Low Profile (< 1.2mm); (5)Available in Tape & Reel.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRF7754TRPBF |
International Rectifier |
MOSFET MOSFT DUAL PCh -12V 5.5A |
Data Sheet |
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