Product Summary

The IS41LV8205-60J is a 2,097,152 × 8-bit high-performance CMOS Dynamic Random Access Memory. The Fast Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20ns per 4-bit word.

Parametrics

IS41LV8205-60J absolute maximum ratings: (1)VT Voltage on Any Pin Relative to GND 5V: –1.0 to +7.0 V; 3.3V: –0.5 to +4.6V; (2)VCC Supply Voltage 5V: –1.0 to +7.0 V; 3.3V: –0.5 to +4.6V; (3)IOUT Output Current: 50 mA; (4)PD Power Dissipation: 1 W; (5)TA Commercial Operation Temperature: 0 to +70℃; (6)Industrial Operation Temperature: -40 to +85℃; (7)TSTG Storage Temperature: –55 to +125℃.

Features

IS41LV8205-60J features: (1)Fast Page Mode Access Cycle; (2)TTL compatible inputs and outputs; (3)Refresh Interval: 2,048 cycles/32 ms; (4)Refresh Mode: RAS-Only,CAS-before-RAS (CBR), and Hidden; (5)Single power supply:5V±10% or 3.3V ± 10%; (6)Byte Write and Byte Read operation via two CAS; (7)Industrial temperature range -40 to 85℃.

Diagrams

IS41LV8205-60J block diagram

IS41C16100
IS41C16100

Other


Data Sheet

Negotiable 
IS41C16100S
IS41C16100S

Other


Data Sheet

Negotiable 
IS41C16105
IS41C16105

Other


Data Sheet

Negotiable 
IS41C16128
IS41C16128

Other


Data Sheet

Negotiable 
IS41C16256
IS41C16256

Other


Data Sheet

Negotiable 
IS41C16256C-35TLI
IS41C16256C-35TLI

ISSI

DRAM 4M, 5V, EDO DRAM 35ns, 40 pin TSOP II

Data Sheet

0-270: $2.47
270-540: $2.32
540-1080: $2.22
1080-2565: $2.15