Product Summary
The IS41LV8205-60J is a 2,097,152 × 8-bit high-performance CMOS Dynamic Random Access Memory. The Fast Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20ns per 4-bit word.
Parametrics
IS41LV8205-60J absolute maximum ratings: (1)VT Voltage on Any Pin Relative to GND 5V: –1.0 to +7.0 V; 3.3V: –0.5 to +4.6V; (2)VCC Supply Voltage 5V: –1.0 to +7.0 V; 3.3V: –0.5 to +4.6V; (3)IOUT Output Current: 50 mA; (4)PD Power Dissipation: 1 W; (5)TA Commercial Operation Temperature: 0 to +70℃; (6)Industrial Operation Temperature: -40 to +85℃; (7)TSTG Storage Temperature: –55 to +125℃.
Features
IS41LV8205-60J features: (1)Fast Page Mode Access Cycle; (2)TTL compatible inputs and outputs; (3)Refresh Interval: 2,048 cycles/32 ms; (4)Refresh Mode: RAS-Only,CAS-before-RAS (CBR), and Hidden; (5)Single power supply:5V±10% or 3.3V ± 10%; (6)Byte Write and Byte Read operation via two CAS; (7)Industrial temperature range -40 to 85℃.
Diagrams
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IS41C16100S |
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IS41C16105 |
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IS41C16128 |
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Negotiable |
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IS41C16256 |
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Negotiable |
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IS41C16256C-35TLI |
ISSI |
DRAM 4M, 5V, EDO DRAM 35ns, 40 pin TSOP II |
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