(Hong Kong)
Product Summary
The IXFH26N50P is a Power MOSFET. The applications of the device include Easy to mount, Space savings and High power density.
Parametrics
IXFH26N50P absolute maximum ratings: (1)VDSS: 500 V when TJ = 25℃ to 150℃; (2)VDGR: 500 V when TJ = 25℃ to 150℃; RGS = 1 MΩ; (3)VGSS Continuos: ± 30 V; (4)VGSM Transient: ± 40 V; (5)ID25: 26 A when TC = 25℃; (6)IDM: 78 A when TC = 25℃, pulse width limited by TJM; (7)IAR: 26 A when TC = 25℃; (8)EAR: 40 mJ when TC = 25℃; (9)EAS: 1.0 J when TC = 25℃; (10)dv/dt: 10 V/ns when IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150℃, RG = 4 Ω; (11)PD: 400 W when TC = 25℃; (12)TJ: -55 to +150 ℃; (13)TJM: 150 ℃; (14)Tstg: -55 to +150℃; (15)TL: 300 ℃ when 1.6 mm (0.062 in.) from case for 10 s; 260 ℃ when Plastic body.
Features
IXFH26N50P features: (1)International standard packages; (2)Fast intrinsic diode; (3)Unclamped Inductive Switching (UIS) rated; (4)Low package inductance: easy to drive and to protect.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IXFH26N50 |
Ixys |
MOSFET DIODE Id26 BVdass500 |
Data Sheet |
Negotiable |
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|
IXFH26N50P |
Ixys |
MOSFET HiPERFET Id26 BVdass500 |
Data Sheet |
Negotiable |
|
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|
IXFH26N50Q |
Ixys |
MOSFET 500V 26A |
Data Sheet |
Negotiable |
|
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