(Hong Kong)
Product Summary
The IXFN27N80 is a Power MOSFET. It is suitable for (1)DC-DC converters; (2)Battery chargers; (3)Switched-mode and resonant-mode power supplies; (4)DC choppers; (5)Temperature and lighting controls.
Parametrics
IXFN27N80 absolute maximum ratings: (1)VDSS: 800 V; (2)VDGR: 800 V; (3)VGS: ±20 V; (4)VGSM: ±30 V; (5)ID25: 27 A; (6)IDM: 108 A; (7)IAR: 14 A; (8)EAR: 30mJ; (9)dv/dt: 5 V/ns; (10)TJ: -55to +150℃; (11)TJM: 150℃; (12)Tstg: -55 to +150℃.
Features
IXFN27N80 features: (1)International standard packages; (2)JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification; (3)miniBLOC, with Aluminium nitride isolation; (4)Low RDS (on) HDMOSTM process; (5)Rugged polysilicon gate cell structure; (6)Unclamped Inductive Switching (UIS) rated; (7)Low package inductance; (8)Fast intrinsic Rectifier.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IXFN27N80 |
Ixys |
MOSFET 800V 27A |
Data Sheet |
Negotiable |
|
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 |
IXFN27N80Q |
Ixys |
MOSFET 27 Amps 800V 0.32 Rds |
Data Sheet |
Negotiable |
|
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