Product Summary

The K6T1008C2C-GF70 is a 128K x8 bit Low Power CMOS Static RAM. The K6T1008C2C-GF70 is fabricated by SAMSUNG¢s advanced CMOS process technology. The device supports various operating temperature ranges and have various package types for user flexibility of system design. The K6T1008C2C-GF70 also supports low data retention voltage for battery back-up operation with low data retention current.

Parametrics

K6T1008C2C-GF70 absolute maximum ratings: (1)Voltage on any pin relative to Vss VIN, VOUT: -0.5 to 7.0 V; (2)Voltage on Vcc supply relative to Vss: VCC -0.5 to 7.0 V; (3)Power Dissipation PD: 1.0 W; (4)Storage temperature TSTG: -65 to 150℃; (5)Operating Temperature TA: 0 to 70℃; (6)Soldering temperature and time TSOLDER: 260℃, 10sec (Lead Only) .

Features

K6T1008C2C-GF70 features: (1)Process Technology: TFT; (2)Organization: 128K ×8; (3)Power Supply Voltage: 4.5~5.5V ; (4)Low Data Retention Voltage: 2V(Min); (5)Three state output and TTL Compatible; (6)Package Type: 32-DIP-600, 32-SOP-525,32-TSOP1-0820F/R.

Diagrams

K6T1008C2C-GF70 block diagram

K6T1008C2C
K6T1008C2C

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Data Sheet

Negotiable 
K6T1008C2E
K6T1008C2E

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Data Sheet

Negotiable 
K6T1008C2E-L
K6T1008C2E-L

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Data Sheet

Negotiable 
K6T1008U2C
K6T1008U2C

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Data Sheet

Negotiable