(Hong Kong)
Product Summary
The MA2S11100L is a Silicon epitaxial planar type Switching Diode.
Parametrics
MA2S11100L absolute maximum ratings: (1)Reverse voltage (DC) VR 80 V; (2)Peak reverse voltage VRM 80 V; (3)Average forward current IF(AV) 100 mA; (4)Peak forward current IFM 225 mA; (5)Non-repetitive peak forward surge current IFSM 500 mA; (6)Junction temperature Tj 150℃; (7)Storage temperature Tstg -55 to +150℃.
Features
MA2S11100L features: (1)Super-small SS-mini type package; (2)Allowing high-density mounting; (3)Short reverse recovery time trr; (4)Small terminal capacitance, Ct.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 MA2S11100L |
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DIODE SWITCH 80V 100MA SSMINI 2P |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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MA2S077 |
Other |
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Data Sheet |
Negotiable |
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MA2S07700L |
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DIODE SWITCH 35V 100MA SSMINI 2P |
Data Sheet |
Negotiable |
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MA2S077G0L |
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DIODE SWITCH 35V 100MA SSMINI |
Data Sheet |
Negotiable |
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MA2S10100L |
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DIODE SWITCH 250V 100MA SSMINI-2 |
Data Sheet |
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MA2S1010GL |
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DIODE SWITCH 250V 100MA SSMINI-2 |
Data Sheet |
Negotiable |
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MA2S111 |
Other |
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Data Sheet |
Negotiable |
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