Product Summary

The MT4LC4M16R6TG-5 is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC4M16R6TG-5 is functionally organized as 4,194,304 locations containing 16 bits each. During READ or WRITE cycles, each location is uniquely addressed via the address bits: 12 row-address bits (A0-A11) and 10 column-address bits (A0-A9) on the MT4LC4M16R6TG-5 version.

Parametrics

MT4LC4M16R6TG-5 absolute maximum ratings: (1)Voltage on VCC Relative to VSS: -1V to +4.6V; (2)Voltage on NC, Inputs or I/O Pins Relative to VSS: -1V to +4.6V; (3)Operating Temperature, TA (ambient), Commercial: 0℃ to +70℃; Extended (IT): -40℃ to +85℃; (4)Storage Temperature (plastic): -55℃ to +150℃; (5)Power Dissipation: 1W.

Features

MT4LC4M16R6TG-5 features: (1)Single +3.3V ±0.3V power supply; (2)Industry-standard x16 pinout, timing, functions, and package; (3)12 row, 10 column addresses (R6) 13 row, 9 column addresses (N3); (4)High-performance CMOS silicon-gate process; (5)All inputs, outputs and clocks are LVTTL-compatible; (6)Extended Data-Out (EDO) PAGE MODE access; (7)4,096-cycle CAS#-BEFORE-RAS# (CBR) REFRESH distributed across 64ms; (8)Optional self refresh (S) for low-power data retention.

Diagrams

MT4LC4M16R6TG-5 circuit diagram

MT4LC16M4A7
MT4LC16M4A7

Other


Data Sheet

Negotiable 
MT4LC16M4G3
MT4LC16M4G3

Other


Data Sheet

Negotiable 
MT4LC16M4H9
MT4LC16M4H9

Other


Data Sheet

Negotiable 
MT4LC16M4T8
MT4LC16M4T8

Other


Data Sheet

Negotiable 
MT4LC1M16C3
MT4LC1M16C3

Other


Data Sheet

Negotiable 
MT4LC1M16E5
MT4LC1M16E5

Other


Data Sheet

Negotiable