Product Summary

The 4 Meg x 16 DRAM MT4LC4M16R6TG-5F is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC4M16R6TG-5F is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in 4,096 rows by 1,024 columns on the MT4LC4M16R6TG-5F. During READ or WRITE cycles, each location is uniquely addressed via the address bits: 12 row-address bits (A0-A11) and 10 column-address bits (A0-A9) on the MT4LC4M16R6TG-5F. In addition, both byte and word accesses are supported via the two CAS# pins (CASL# and CASH#).

Parametrics

MT4LC4M16R6TG-5F absolute maximum ratings: (1)Voltage on VCC Relative to VSS: -1V to +4.6V; (2)Voltage on NC, Inputs or I/O Pins Relative to VSS: -1V to +4.6V; (3)Operating Temperature, TA (ambient) Commercial: 0℃ to +70℃; (4)Extended (IT): -40℃ to +85℃; (5)Storage Temperature (plastic): -55℃ to +150℃; (6)Power Dissipation: 1W.

Features

MT4LC4M16R6TG-5F features: (1)Single +3.3V ±0.3V power supply; (2)Industry-standard x16 pinout, timing, functions, and package; (3)12 row, 10 column addresses (R6); (4)High-performance CMOS silicon-gate process; (5)All inputs, outputs and clocks are LVTTL-compatible; (6)Extended Data-Out (EDO) PAGE MODE access; (7)4,096-cycle CAS#-BEFORE-RAS# (CBR) REFRESH distributed across 64ms; (8)Optional self refresh (S) for low-power data retention.

Diagrams

MT4LC4M16R6TG-5F FUNCTIONAL BLOCK DIAGRAM

MT4LC16M4H9
MT4LC16M4H9

Other


Data Sheet

Negotiable 
MT4LC16M4T8
MT4LC16M4T8

Other


Data Sheet

Negotiable 
MT4LC1M16C3
MT4LC1M16C3

Other


Data Sheet

Negotiable 
MT4LC4M16N3
MT4LC4M16N3

Other


Data Sheet

Negotiable 
MT4LC4M16R6
MT4LC4M16R6

Other


Data Sheet

Negotiable 
MT4LC4M4A1
MT4LC4M4A1

Other


Data Sheet

Negotiable