Product Summary

The NCP5355DR2G is a dual MOSFET gate driver optimized to drive the gates of both high− and low−side Power MOSFETs in a Synchronous Buck converter. The NCP5355DR2G is an excellent companion to multiphase controllers that do not have integrated gate drivers, such as ON Semiconductors NCP5314 or NCP5316. This architecture provides the power supply designer greater flexibility by being able to locate the gate drivers close to the MOSFETs.

Parametrics

NCP5355DR2G absolute maximum ratings: (1)Operating Junction Temperature, TJ Internally Limited; (2)Package Thermal Resistance: 45℃/W; (3)Junction-to-Ambient, RJA: 50℃/W; (4)Storage Temperature Range, TS: -65 to 150℃; (5)Lead Temperature Soldering: Reflow: (SMD styles only): 230℃ peak; (6)JEDEC Moisture Sensitivity 1.

Features

NCP5355DR2G features: (1)8.0 V 14 V Gate Drive Capability; (2)2.0 A Peak Drive Current; (3)Rise and Fall Times < 15 ns Typical into 3300 pF; (4)Propagation Delay from Inputs to Outputs < 30 ns; (5)Adaptive Nonoverlap Time Optimized for Large Power MOSFETs; (6)Floating Top Driver Accommodates Applications Up to 26 V; (7)Undervoltage Lockout to Prevent Switching when the Input Voltage is Low; (8)Thermal Shutdown Protection Against Overtemperature; (9)TG to DRN Pull?Down Resistor Prevents HV Supply?Induced Turn On of Top MOSFET; (10)BG to PGND Pull Down Resistor Prevents Transient Turn On of Bottom MOSFET; (11)Internal Bootstrap Diode Reduces Parts Count and Total Solution Cost.

Diagrams

NCP5355DR2G block diagram

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