(Hong Kong)
Product Summary
The PSMN063-150D is an N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS1 technology. It is suitalbe for DC to DC converters and Switched mode power supplies.
Parametrics
PSMN063-150D absolute maximum ratings: (1)VDS drain-source voltage DC: 150 V; (2)VDGR drain-gate voltage (DC): 150 V; (3)VGS gate-source voltage (DC): ±20 V; (4)ID drain current (DC): 20 A; (5)IDM peak drain current: 116 A; (6)Ptot total power dissipation: 150 W; (7)Tstg storage temperature: -55 to +175℃; (8)Tj operating junction temperature: -55 to +175℃.
Features
PSMN063-150D features: (1)TrenchMOS technology; (2)Fast Switching; (3)Very low on-state resistance; (4)Low thermal resistance.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 PSMN063-150D |
Other |
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Data Sheet |
Negotiable |
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PSMN063-150D /T3 |
NXP Semiconductors |
MOSFET TAPE13 PWR-MOS |
Data Sheet |
Negotiable |
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PSMN063-150D,118 |
NXP Semiconductors |
MOSFET TAPE13 PWR-MOS |
Data Sheet |
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