Product Summary

The RJP6065 is a Silicon N Channel IGBT.

Parametrics

RJP6065 absolute maximum ratings: (1)Collector to emitter voltage VCES: 630 V; (2)Gate to emitter voltage VGES: ±30 V; (3)Collector current Ic: 40 A; (4)Collector peak current ic(peak): 100 A; (5)Collector dissipation PC: 50 W; (6)Junction to case thermal impedance: 2.5℃/W; (7)Junction temperature Tj: 150℃; (8)Storage temperature Tstg: –55 to +150℃.

Features

RJP6065 features: (1)Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25℃) ; (2)Gate to emitter voltage rating ±30 V ; (3)Pb-free lead plating and chip bonding.

Diagrams

RJP6065 block diagram