Product Summary

The SST34HF3284704E is a PSRAM ComboMemory. The SST34HF3284704E integrates either a 2M ×16 or 4M ×8 CMOS flash memory bank with either a 256K ×16 or 512Kx16 CMOS pseudo SRAM (PSRAM) memory bank in a multi-chip package (MCP). The SST34HF3284704E is fabricated using SSTs proprietary, high-performance CMOS Super-Flash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability compared with alternate approaches. The SST34HF3284704E is ideal for applications such as cellular phones, GPS devices, PDAs, and other portable electronic devices in a low power and small form factor system.

Parametrics

SST34HF3284704E absolute maximum ratings: (1)Operating Temperature: -20 to +85℃; (2)Storage Temperature: -65 to +125℃; (3)D. C. Voltage on Any Pin to Ground Potential: -0.5V to VDD1+0.3V; (4)Transient Voltage (<20 ns) on Any Pin to Ground Potential: -1.0V to VDD1+1.0V; (5)Package Power Dissipation Capability (TA = 25℃): 1.0W; (6)Surface Mount Solder Reflow Temperature: 260℃ for 10 seconds; (7)Output Short Circuit Current: 50 mA.

Features

SST34HF3284704E features: (1)Flash Organization: 2M×16 or 4M×8; (2)Dual-Bank Architecture for Concurrent Read/Write Operation; (3)PSRAM Organization; (4)Single 2.7-3.3V Read and Write Operations; (5)Superior Reliability; (6)Low Power Consumption:; (7)Hardware Sector Protection (WP#); (8)Hardware Reset Pin (RST#); (9)Byte Selection for Flash (CIOF pin); (10)Sector-Erase Capability; (11)Flash Chip-Erase Capability.

Diagrams

SST34HF3284704E block diagram

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