(Hong Kong)
Product Summary
The UMN10N is a Switching diode. It is suitable for Very fast recovery.
Parametrics
UMN10N absolute maximum ratings: (1)Surge current, Isurge: 4A; (2)Junction temperature, Tj: 150℃; (3)Storage temperature, Tstg: -55 to 150℃; (4)Reverse voltage (DC), VR: 80V; (5)Average rectified forward current (Single), IO: 100mA; (6)Reverse voltage (repetitive peak), VRM: 80V; (7)Forward current repetitive peak (Single), IFM: 300A; (8)Power dissipation, Pd: 200mW.
Features
UMN10N features: (1)Small mold type. (UMD6); (2)High reliability.
Diagrams
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Pricing (USD) |
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 UMN10N |
Other |
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Data Sheet |
Negotiable |
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UMN10NTR |
ROHM Semiconductor |
Diodes (General Purpose, Power, Switching) SWITCH 80V 100MA |
Data Sheet |
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