(Hong Kong)
Product Summary
The XP162A12A6PRN is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-89 package makes high density mounting possible.
Parametrics
XP162A12A6PRN absolute maximum ratings: (1)Drain - Source Voltage: Vdss -20 V; (2)Gate - Source Voltage: Vgss + 12 V; (3)Drain Current (DC): Id -2.5 A; (4)Drain Current (Pulse): Idp -10 A; (5)Storage Temperature: Idr -2.5 A; (6)Reverse Drain Current: Pd 2 W; (7)Continuous Channel Power Dissipation (note): Tch 150 ℃; (8)Channel Temperature: Tstg -55 to 150℃.
Features
XP162A12A6PRN features: (1)Low on-state resistance : Rds (on) = 0.17Ω ( Vgs = -4.5V ) Rds (on) = 0.3Ω ( Vgs = -2.5V ); (2)Ultra high-speed switching; (3)Operational Voltage : -2.5V; (4)Gate protect diode built-in; (5)THigh density mounting : SOT - 89.
Diagrams
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 XP1601 |
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XP161 |
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XP161A01A8PR |
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XP161A02A1PR |
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XP161A0390PR |
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Negotiable |
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XP161A11A1PR |
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MOSFET N-CH 30V 4A SOT89 |
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