(Hong Kong)
Product Summary
The k6x8008t2b-uf55 is a Low Power and Low Voltage CMOS Static RAM. The k6x8008t2b-uf55 is fabricated by SAMSUNG’s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The k6x8008t2b-uf55 also support low data retention voltage for battery back-up operation with low data retention current.
Parametrics
k6x8008t2b-uf55 absolute maximum ratings: (1)Voltage on any pin relative to Vss VIN, VOUT -0.2 to VCC+0.3 (max. 3.9V) V; (2)Voltage on Vcc supply relative to Vss VCC -0.2 to 3.9 V; (3)Power Dissipation PD 1.0 W; (4)Storage temperature TSTG -65 to 150℃; (5)Operating Temperature TA -40 to 85℃.
Features
k6x8008t2b-uf55 features: (1)Process Technology: Full CMOS; (2)Organization: 1M x8; (3)Power Supply Voltage: 2.7~3.6V; (4)Low Data Retention Voltage: 1.5V(Min); (5)Three state outputs; (6)Package Type: 44-TSOP2-400F.
Diagrams
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